Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si delta -doping layer.
نویسندگان
چکیده
Magnetotransport properties of a pseudomorphic GaAs/ Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T =1.4 K and 4.2 K. The structure studied consists of a Si δ-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is ne = 1.67×1016 m−2. By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.8In0.2As QW can become populated as well as the Si δ-layer. The presence of electrons in the δ-layer results in drastic changes in the transport
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ورودعنوان ژورنال:
- Physical review. B, Condensed matter
دوره 52 16 شماره
صفحات -
تاریخ انتشار 1995